![]() ![]() These models were used to study the double-clamped beam scaling on switching characteristics. The pull-in and pull-out characteristics from the simulation results are consistent with the experimental results. We focus on designing the graphene NEM switch in line with the experimental work. In this work, we present a three dimensional (3D) finite element method (FEM) simulation of double-clamped nanocrystalline graphene beam NEM switches. Using graphene as a material for such devices can address some of the problems of conventional NEM switches by providing high reliability and a low pull-in voltage. These outstanding properties of graphene make it a very promising material for high-performance NEM contact switches. Graphene is a two-dimensional material with excellent mechanical stability and electrical conductivity, and a high Young’s modulus of ~1 TPa. On the other hand, the inherently low ON current in comparison with that of CMOS devices and the high pull-in voltage of conventional NEM switches restrict their use as a viable alternative for CMOS circuits and low-power applications. Furthermore, NEM switches are expected to be robust against external disturbances such as radiation and temperature fluctuations, which makes them ideal for inhospitable environments. They are also expected to achieve abrupt switching with subthreshold swing values less than 60 mV/dec. ![]() The switching operation of such devices is mainly based on electrostatic actuation, which leads to a very low leakage current and high ON/OFF ratios. ![]() On the other hand, nanoelectromechanical (NEM) switches are being investigated because of their promise for future low-power-consumption applications. The standby power consumption of conventional complementary metal-oxide semiconductor (CMOS) circuits increases to the dynamic ON state level as they are scaled down to the scale of a few tens of nanometers. ![]()
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